Search results for "DIFFUSION BARRIER"
showing 10 items of 10 documents
Septins 2, 7 and 9 and MAP4 colocalize along the axoneme in the primary cilium and control ciliary length
2013
International audience; Septins are a large, evolutionarily conserved family of GTPases that form hetero-oligomers and interact with the actin-based cytoskeleton and microtubules. They are involved in scaffolding functions, and form diffusion barriers in budding yeast, the sperm flagellum and the base of primary cilia of kidney epithelial cells. We investigated the role of septins in the primary cilium of retinal pigmented epithelial (RPE) cells, and found that SEPT2 forms a 1:1:1 complex with SEPT7 and SEPT9 and that the three members of this complex colocalize along the length of the axoneme. Similar to observations in kidney epithelial cells, depletion of cilium-localized septins by siRN…
Ab Initio Calculations of the Transfer and Aggregation of F Centers in CaF2
2012
The F center and R center in CaF2 crystals have been studied by using density functional theory (DFT) with a hybrid B3PW description of exchange and correlation. Our calculations show that the F-center diffusion barrier is equal to 1.67 eV. During the F-center transfer, the trapped electron is more delocalized than that in the regular F-center case, and the gap between defect level and CB in the α-spin state decreases. The surface F-center investigation shows the trend of F centers to locate near the surface. The association energy calculations of R centers indicate stable aggregations of isolated F centers. During the F-center aggregation, a considerable covalency forms between two neighbo…
Thermal stability under air of tungsten–titanium diffusion barrier layer between silica and platinum
2014
Abstract The present work investigated the thermal stability of tungsten–titanium diffusion barrier layers intercalated between SiO 2 substrate and platinum thin film. The resulting structures were annealed under air in the temperature range 400–600 °C for annealing times up to 100 h. Chemical and structural characterizations at different stages of the treatment evidenced several phenomena occurring during annealing under air, especially the complete oxidation of the adhesive layer, the diffusion of tungsten oxide through platinum film at particle boundaries as well as the sublimation process of tungsten oxide. The results of film surface chemistry and microstructure were correlated with di…
Comparative study of air and vacuum annealing atmosphere towards Pt/Ti–W/SiO2 stability
2013
Abstract The thermal stability of Pt/Ti–W/SiO2 system was studied after annealing under air or vacuum in the present work. A Ti–W adhesive film (30 at. % Ti) was deposited on a SiO2 substrate followed by a thicker Pt layer. Depositions were performed using DC magnetron sputtering. The whole as-deposited films are metallic with a columnar growth of platinum deposit which totally wets the substrate. Whatever the atmosphere is, annealing at 500 °C for 12 h does not change the platinum state but modifies the morphology of platinum particles, the lateral average size of which increasing from less than 10 nm up to ca. 75 nm. Besides, a noticeable diffusion of metallic tungsten through Pt film is …
First-principles calculations of the initial incorporation of carbon into flat and stepped Pd surfaces
2010
We employ density-functional-theory calculations to examine carbon adsorption and diffusion in Pd bulk, and on Pd(111) and Pd(211) surfaces. Different possible subsurface and on-surface structures are explored and the most stable structures are analyzed. We calculate various diffusion paths: lateral diffusion on a surface, migration to a subsurface region, and within the first interlayer. Our calculations show in accordance with the earlier theoretical results that on Pd(111) carbon prefers to adsorb on octahedral interstitial sites. On Pd(211) the fourfold hollow site under the step is energetically the most favorable one and the second best sites are the octahedral sites. The calculations…
Atomic layer deposition of ternary ruthenates by combining metalorganic precursors with RuO4 as the co-reactant
2022
In this work, the use of ruthenium tetroxide (RuO4) as a co-reactant for atomic layer deposition (ALD) is reported. The role of RuO4 as a co-reactant is twofold: it acts both as an oxidizing agent and as a Ru source. It is demonstrated that ALD of a ternary Ru-containing metal oxide (i.e. a metal ruthenate) can be achieved by combining a metalorganic precursor with RuO4 in a two-step process. RuO4 is proposed to combust the organic ligands of the adsorbed precursor molecules while also binding RuO2 to the surface. As a proof of concept two metal ruthenate processes are developed: one for aluminum ruthenate, by combining trimethylaluminum (TMA) with RuO4; and one for platinum ruthenate, by c…
Enhanced interfacial lithium storage in nanocomposites of transition metals with LiF and Li2O: Comparison of DFT calculations and experimental studies
2008
Abstract Me/LiX nanocomposites (Me – transition metal and X = F or O) exhibit extra lithium storage, with pseudo-capacitive behavior and high-rate performance. While LiX surface layers or the interfacial core serves as hosts for extra Li, atoms of contacting transition metal serve as electron sinks, depending on Me electronegativity. To verify the mechanism, we have performed comparative DFT-LCAO calculations on the polar Ti|Li|Li2O(111) and non-polar Cu|Li|LiF(001) interfaces with extra Li atoms inserted inside both 2D interfaces, gradually changing their concentration. Theoretical calculations confirm validity of this interfacial model for explanation of the extra storage capacity at low …
Controlled Activation of Substrate Templating in Molecular Self-Assembly by Deprotonation
2013
cited By 7; International audience; Templated assembly of organic molecules constitutes a promising approach for fabricating functional nanostructures at surfaces with molecular-scale control. Using the substrate template for steering the adsorbate growth enables creating a rich variety of molecular structures by tuning the subtle balance of intermolecular and molecule–surface interactions. On insulating surfaces, however, surface templating is largely absent due to the comparatively weak molecule–surface interactions compared to metallic substrates. Here, we demonstrate the activation of substrate templating in molecular self-assembly on a bulk insulator by controlled deprotonation of the …
Quantitative description of C-60 diffusion on an insulating surface
2010
The diffusion of ${\text{C}}_{60}$ molecules on large, atomically flat terraces of the ${\text{CaF}}_{2}(111)$ surface is studied under ultrahigh vacuum conditions at various substrate temperatures below room temperature. The weak molecule-substrate interaction on this insulating surface makes a direct observation of hopping events difficult. Therefore, to determine a quantitative value of the diffusion barrier, we employ the so-called onset method. This method is based on the analysis of spatial properties of islands created by nucleation of diffusing ${\text{C}}_{60}$ molecules, as measured by noncontact atomic force microscopy. We first determine the critical cluster size to be ${i}^{\en…
Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils
2018
In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO 2 using AP-LTO® 330 and ozone (O 3 ) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO 2 film deposition rate was dependent on the temperature varying within 1.5–2.2 Å cycle −1 in the temperature range of 80–350°C, respectively. The low-temperature SiO 2 process that resulted was combined with the conventional trimethyl aluminium + H 2 O process in order to prepare thin mul…